mtd: nand: support alternate BB marker locations on MLC

This is a slightly modified version of a patch submitted last year by
Reuben Dowle <reuben.dowle@navico.com>.  His original comments follow:

This patch adds support for some MLC NAND flashes that place the BB
marker in the LAST page of the bad block rather than the FIRST page used
for SLC NAND and other types of MLC nand.

Lifted from Samsung datasheet for K9LG8G08U0A (1Gbyte MLC NAND):
"
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial
invalid block(s) information is written prior to shipping. The initial
invalid block(s) status is defined by the 1st byte in the spare area.
Samsung makes sure that the last page of every initial invalid block has
non-FFh data at the column address of 2,048.
...
"

As far as I can tell, this is the same for all Samsung MLC nand, and in
fact the samsung bsp for the processor used in our project (s3c6410)
actually contained a hack similar to this patch but less portable to
enable use of their NAND parts. I discovered this problem when trying to
use a Micron NAND which does not used this layout - I wish samsung would
put their stuff in main-line to avoid this type of problem.

Currently this patch causes all MLC nand with manufacturer codes from
Samsung and ST(Numonyx) to use this alternative location, since these
are the manufactures that I know of that use this layout.

Signed-off-by: Kevin Cernekee <cernekee@gmail.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>

1 files changed, 15 insertions, 0 deletions

diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 85891dcc27ad..4a7b86423ee9 100644
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -347,6 +347,9 @@ static int nand_block_bad(struct mtd_info *mtd, loff_t ofs, int getchip)
         struct nand_chip *chip = mtd->priv;
         u16 bad;
 
+        if (chip->options & NAND_BB_LAST_PAGE)
+                ofs += mtd->erasesize - mtd->writesize;
+
         page = (int)(ofs >> chip->page_shift) & chip->pagemask;
 
         if (getchip) {
@@ -396,6 +399,9 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
         uint8_t buf[2] = { 0, 0 };
         int block, ret;
 
+        if (chip->options & NAND_BB_LAST_PAGE)
+                ofs += mtd->erasesize - mtd->writesize;
+
         /* Get block number */
         block = (int)(ofs >> chip->bbt_erase_shift);
         if (chip->bbt)
@@ -2933,6 +2939,15 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
         if (*maf_id != NAND_MFR_SAMSUNG && !type->pagesize)
                 chip->options &= ~NAND_SAMSUNG_LP_OPTIONS;
 
+        /*
+         * Bad block marker is stored in the last page of each block
+         * on Samsung and Hynix MLC devices
+         */
+        if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+                        (*maf_id == NAND_MFR_SAMSUNG ||
+                         *maf_id == NAND_MFR_HYNIX))
+                chip->options |= NAND_BB_LAST_PAGE;
+
         /* Check for AND chips with 4 page planes */
         if (chip->options & NAND_4PAGE_ARRAY)
                 chip->erase_cmd = multi_erase_cmd;