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-rw-r--r--drivers/mtd/nand/nand_base.c7
1 files changed, 4 insertions, 3 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 3ed9c5e4d34..35b4565050f 100644
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -3132,8 +3132,8 @@ ident_done:
3132 * Bad block marker is stored in the last page of each block 3132 * Bad block marker is stored in the last page of each block
3133 * on Samsung and Hynix MLC devices; stored in first two pages 3133 * on Samsung and Hynix MLC devices; stored in first two pages
3134 * of each block on Micron devices with 2KiB pages and on 3134 * of each block on Micron devices with 2KiB pages and on
3135 * SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan 3135 * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
3136 * only the first page. 3136 * All others scan only the first page.
3137 */ 3137 */
3138 if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) && 3138 if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
3139 (*maf_id == NAND_MFR_SAMSUNG || 3139 (*maf_id == NAND_MFR_SAMSUNG ||
@@ -3143,7 +3143,8 @@ ident_done:
3143 (*maf_id == NAND_MFR_SAMSUNG || 3143 (*maf_id == NAND_MFR_SAMSUNG ||
3144 *maf_id == NAND_MFR_HYNIX || 3144 *maf_id == NAND_MFR_HYNIX ||
3145 *maf_id == NAND_MFR_TOSHIBA || 3145 *maf_id == NAND_MFR_TOSHIBA ||
3146 *maf_id == NAND_MFR_AMD)) || 3146 *maf_id == NAND_MFR_AMD ||
3147 *maf_id == NAND_MFR_MACRONIX)) ||
3147 (mtd->writesize == 2048 && 3148 (mtd->writesize == 2048 &&
3148 *maf_id == NAND_MFR_MICRON)) 3149 *maf_id == NAND_MFR_MICRON))
3149 chip->bbt_options |= NAND_BBT_SCAN2NDPAGE; 3150 chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;