| Commit message (Collapse) | Author | Age |
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Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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For Dataflash, can_mark_obsolete = false and the NAND write buffering
code (wbuf.c) is used.
Since the DataFlash chip will automatically erase pages when writing,
the cleanmarkers are not needed - so cleanmarker_oob = false and
cleanmarker_size = 0
DataFlash page-sizes are not a power of two (they're multiples of 528
bytes). The SECTOR_ADDR macro (added in the previous core patch) is
replaced with a (slower) div/mod version if CONFIG_JFFS2_FS_DATAFLASH is
selected.
Signed-off-by: Andrew Victor <andrew@sanpeople.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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This is implemented using a ioctl to switch the MTD char device into
one of the different OTP "modes", at which point read/write/seek can
operate on the selected OTP area. Also some extra ioctls to query
for size and lock protection segments or groups. Some example user
space utilities are provided.
Signed-off-by: Nicolas Pitre <nico@cam.org>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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This enables support for reading, writing and locking so called
"Protection Registers" present on some flash chips.
A subset of them are pre-programmed at the factory with a
unique set of values. The rest is user-programmable.
Signed-off-by: Nicolas Pitre <nico@cam.org>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
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Initial git repository build. I'm not bothering with the full history,
even though we have it. We can create a separate "historical" git
archive of that later if we want to, and in the meantime it's about
3.2GB when imported into git - space that would just make the early
git days unnecessarily complicated, when we don't have a lot of good
infrastructure for it.
Let it rip!
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