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-rw-r--r--include/mtd/mtd-abi.h9
1 files changed, 3 insertions, 6 deletions
diff --git a/include/mtd/mtd-abi.h b/include/mtd/mtd-abi.h
index f913c30d7b89..f71dac420394 100644
--- a/include/mtd/mtd-abi.h
+++ b/include/mtd/mtd-abi.h
@@ -24,6 +24,7 @@ struct mtd_oob_buf {
24#define MTD_NORFLASH 3 24#define MTD_NORFLASH 3
25#define MTD_NANDFLASH 4 25#define MTD_NANDFLASH 4
26#define MTD_DATAFLASH 6 26#define MTD_DATAFLASH 6
27#define MTD_UBIVOLUME 7
27 28
28#define MTD_WRITEABLE 0x400 /* Device is writeable */ 29#define MTD_WRITEABLE 0x400 /* Device is writeable */
29#define MTD_BIT_WRITEABLE 0x800 /* Single bits can be flipped */ 30#define MTD_BIT_WRITEABLE 0x800 /* Single bits can be flipped */
@@ -36,12 +37,6 @@ struct mtd_oob_buf {
36#define MTD_CAP_NORFLASH (MTD_WRITEABLE | MTD_BIT_WRITEABLE) 37#define MTD_CAP_NORFLASH (MTD_WRITEABLE | MTD_BIT_WRITEABLE)
37#define MTD_CAP_NANDFLASH (MTD_WRITEABLE) 38#define MTD_CAP_NANDFLASH (MTD_WRITEABLE)
38 39
39
40// Types of automatic ECC/Checksum available
41#define MTD_ECC_NONE 0 // No automatic ECC available
42#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
43#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
44
45/* ECC byte placement */ 40/* ECC byte placement */
46#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended) 41#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
47#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode) 42#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
@@ -61,6 +56,8 @@ struct mtd_info_user {
61 uint32_t erasesize; 56 uint32_t erasesize;
62 uint32_t writesize; 57 uint32_t writesize;
63 uint32_t oobsize; // Amount of OOB data per block (e.g. 16) 58 uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
59 /* The below two fields are obsolete and broken, do not use them
60 * (TODO: remove at some point) */
64 uint32_t ecctype; 61 uint32_t ecctype;
65 uint32_t eccsize; 62 uint32_t eccsize;
66}; 63};