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-rw-r--r--include/mtd/mtd-abi.h103
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diff --git a/include/mtd/mtd-abi.h b/include/mtd/mtd-abi.h
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1/*
2 * $Id: mtd-abi.h,v 1.7 2004/11/23 15:37:32 gleixner Exp $
3 *
4 * Portions of MTD ABI definition which are shared by kernel and user space
5 */
6
7#ifndef __MTD_ABI_H__
8#define __MTD_ABI_H__
9
10#ifndef __KERNEL__ /* Urgh. The whole point of splitting this out into
11 separate files was to avoid #ifdef __KERNEL__ */
12#define __user
13#endif
14
15struct erase_info_user {
16 uint32_t start;
17 uint32_t length;
18};
19
20struct mtd_oob_buf {
21 uint32_t start;
22 uint32_t length;
23 unsigned char __user *ptr;
24};
25
26#define MTD_ABSENT 0
27#define MTD_RAM 1
28#define MTD_ROM 2
29#define MTD_NORFLASH 3
30#define MTD_NANDFLASH 4
31#define MTD_PEROM 5
32#define MTD_OTHER 14
33#define MTD_UNKNOWN 15
34
35#define MTD_CLEAR_BITS 1 // Bits can be cleared (flash)
36#define MTD_SET_BITS 2 // Bits can be set
37#define MTD_ERASEABLE 4 // Has an erase function
38#define MTD_WRITEB_WRITEABLE 8 // Direct IO is possible
39#define MTD_VOLATILE 16 // Set for RAMs
40#define MTD_XIP 32 // eXecute-In-Place possible
41#define MTD_OOB 64 // Out-of-band data (NAND flash)
42#define MTD_ECC 128 // Device capable of automatic ECC
43#define MTD_NO_VIRTBLOCKS 256 // Virtual blocks not allowed
44
45// Some common devices / combinations of capabilities
46#define MTD_CAP_ROM 0
47#define MTD_CAP_RAM (MTD_CLEAR_BITS|MTD_SET_BITS|MTD_WRITEB_WRITEABLE)
48#define MTD_CAP_NORFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE)
49#define MTD_CAP_NANDFLASH (MTD_CLEAR_BITS|MTD_ERASEABLE|MTD_OOB)
50#define MTD_WRITEABLE (MTD_CLEAR_BITS|MTD_SET_BITS)
51
52
53// Types of automatic ECC/Checksum available
54#define MTD_ECC_NONE 0 // No automatic ECC available
55#define MTD_ECC_RS_DiskOnChip 1 // Automatic ECC on DiskOnChip
56#define MTD_ECC_SW 2 // SW ECC for Toshiba & Samsung devices
57
58/* ECC byte placement */
59#define MTD_NANDECC_OFF 0 // Switch off ECC (Not recommended)
60#define MTD_NANDECC_PLACE 1 // Use the given placement in the structure (YAFFS1 legacy mode)
61#define MTD_NANDECC_AUTOPLACE 2 // Use the default placement scheme
62#define MTD_NANDECC_PLACEONLY 3 // Use the given placement in the structure (Do not store ecc result on read)
63
64struct mtd_info_user {
65 uint8_t type;
66 uint32_t flags;
67 uint32_t size; // Total size of the MTD
68 uint32_t erasesize;
69 uint32_t oobblock; // Size of OOB blocks (e.g. 512)
70 uint32_t oobsize; // Amount of OOB data per block (e.g. 16)
71 uint32_t ecctype;
72 uint32_t eccsize;
73};
74
75struct region_info_user {
76 uint32_t offset; /* At which this region starts,
77 * from the beginning of the MTD */
78 uint32_t erasesize; /* For this region */
79 uint32_t numblocks; /* Number of blocks in this region */
80 uint32_t regionindex;
81};
82
83#define MEMGETINFO _IOR('M', 1, struct mtd_info_user)
84#define MEMERASE _IOW('M', 2, struct erase_info_user)
85#define MEMWRITEOOB _IOWR('M', 3, struct mtd_oob_buf)
86#define MEMREADOOB _IOWR('M', 4, struct mtd_oob_buf)
87#define MEMLOCK _IOW('M', 5, struct erase_info_user)
88#define MEMUNLOCK _IOW('M', 6, struct erase_info_user)
89#define MEMGETREGIONCOUNT _IOR('M', 7, int)
90#define MEMGETREGIONINFO _IOWR('M', 8, struct region_info_user)
91#define MEMSETOOBSEL _IOW('M', 9, struct nand_oobinfo)
92#define MEMGETOOBSEL _IOR('M', 10, struct nand_oobinfo)
93#define MEMGETBADBLOCK _IOW('M', 11, loff_t)
94#define MEMSETBADBLOCK _IOW('M', 12, loff_t)
95
96struct nand_oobinfo {
97 uint32_t useecc;
98 uint32_t eccbytes;
99 uint32_t oobfree[8][2];
100 uint32_t eccpos[32];
101};
102
103#endif /* __MTD_ABI_H__ */