diff options
Diffstat (limited to 'include/linux/mtd/nand.h')
-rw-r--r-- | include/linux/mtd/nand.h | 54 |
1 files changed, 27 insertions, 27 deletions
diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h index 2d36413b2f94..da5e67b3fc70 100644 --- a/include/linux/mtd/nand.h +++ b/include/linux/mtd/nand.h | |||
@@ -24,7 +24,7 @@ | |||
24 | * bat later if I did something naughty. | 24 | * bat later if I did something naughty. |
25 | * 10-11-2000 SJH Added private NAND flash structure for driver | 25 | * 10-11-2000 SJH Added private NAND flash structure for driver |
26 | * 10-24-2000 SJH Added prototype for 'nand_scan' function | 26 | * 10-24-2000 SJH Added prototype for 'nand_scan' function |
27 | * 10-29-2001 TG changed nand_chip structure to support | 27 | * 10-29-2001 TG changed nand_chip structure to support |
28 | * hardwarespecific function for accessing control lines | 28 | * hardwarespecific function for accessing control lines |
29 | * 02-21-2002 TG added support for different read/write adress and | 29 | * 02-21-2002 TG added support for different read/write adress and |
30 | * ready/busy line access function | 30 | * ready/busy line access function |
@@ -36,21 +36,21 @@ | |||
36 | * CONFIG_MTD_NAND_ECC_JFFS2 is not set | 36 | * CONFIG_MTD_NAND_ECC_JFFS2 is not set |
37 | * 08-10-2002 TG extensions to nand_chip structure to support HW-ECC | 37 | * 08-10-2002 TG extensions to nand_chip structure to support HW-ECC |
38 | * | 38 | * |
39 | * 08-29-2002 tglx nand_chip structure: data_poi for selecting | 39 | * 08-29-2002 tglx nand_chip structure: data_poi for selecting |
40 | * internal / fs-driver buffer | 40 | * internal / fs-driver buffer |
41 | * support for 6byte/512byte hardware ECC | 41 | * support for 6byte/512byte hardware ECC |
42 | * read_ecc, write_ecc extended for different oob-layout | 42 | * read_ecc, write_ecc extended for different oob-layout |
43 | * oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB, | 43 | * oob layout selections: NAND_NONE_OOB, NAND_JFFS2_OOB, |
44 | * NAND_YAFFS_OOB | 44 | * NAND_YAFFS_OOB |
45 | * 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL | 45 | * 11-25-2002 tglx Added Manufacturer code FUJITSU, NATIONAL |
46 | * Split manufacturer and device ID structures | 46 | * Split manufacturer and device ID structures |
47 | * | 47 | * |
48 | * 02-08-2004 tglx added option field to nand structure for chip anomalities | 48 | * 02-08-2004 tglx added option field to nand structure for chip anomalities |
49 | * 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id | 49 | * 05-25-2004 tglx added bad block table support, ST-MICRO manufacturer id |
50 | * update of nand_chip structure description | 50 | * update of nand_chip structure description |
51 | * 01-17-2005 dmarlin added extended commands for AG-AND device and added option | 51 | * 01-17-2005 dmarlin added extended commands for AG-AND device and added option |
52 | * for BBT_AUTO_REFRESH. | 52 | * for BBT_AUTO_REFRESH. |
53 | * 01-20-2005 dmarlin added optional pointer to hardware specific callback for | 53 | * 01-20-2005 dmarlin added optional pointer to hardware specific callback for |
54 | * extra error status checks. | 54 | * extra error status checks. |
55 | */ | 55 | */ |
56 | #ifndef __LINUX_MTD_NAND_H | 56 | #ifndef __LINUX_MTD_NAND_H |
@@ -120,8 +120,8 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ | |||
120 | #define NAND_CMD_CACHEDPROG 0x15 | 120 | #define NAND_CMD_CACHEDPROG 0x15 |
121 | 121 | ||
122 | /* Extended commands for AG-AND device */ | 122 | /* Extended commands for AG-AND device */ |
123 | /* | 123 | /* |
124 | * Note: the command for NAND_CMD_DEPLETE1 is really 0x00 but | 124 | * Note: the command for NAND_CMD_DEPLETE1 is really 0x00 but |
125 | * there is no way to distinguish that from NAND_CMD_READ0 | 125 | * there is no way to distinguish that from NAND_CMD_READ0 |
126 | * until the remaining sequence of commands has been completed | 126 | * until the remaining sequence of commands has been completed |
127 | * so add a high order bit and mask it off in the command. | 127 | * so add a high order bit and mask it off in the command. |
@@ -145,7 +145,7 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ | |||
145 | #define NAND_STATUS_READY 0x40 | 145 | #define NAND_STATUS_READY 0x40 |
146 | #define NAND_STATUS_WP 0x80 | 146 | #define NAND_STATUS_WP 0x80 |
147 | 147 | ||
148 | /* | 148 | /* |
149 | * Constants for ECC_MODES | 149 | * Constants for ECC_MODES |
150 | */ | 150 | */ |
151 | 151 | ||
@@ -191,12 +191,12 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ | |||
191 | #define NAND_CACHEPRG 0x00000008 | 191 | #define NAND_CACHEPRG 0x00000008 |
192 | /* Chip has copy back function */ | 192 | /* Chip has copy back function */ |
193 | #define NAND_COPYBACK 0x00000010 | 193 | #define NAND_COPYBACK 0x00000010 |
194 | /* AND Chip which has 4 banks and a confusing page / block | 194 | /* AND Chip which has 4 banks and a confusing page / block |
195 | * assignment. See Renesas datasheet for further information */ | 195 | * assignment. See Renesas datasheet for further information */ |
196 | #define NAND_IS_AND 0x00000020 | 196 | #define NAND_IS_AND 0x00000020 |
197 | /* Chip has a array of 4 pages which can be read without | 197 | /* Chip has a array of 4 pages which can be read without |
198 | * additional ready /busy waits */ | 198 | * additional ready /busy waits */ |
199 | #define NAND_4PAGE_ARRAY 0x00000040 | 199 | #define NAND_4PAGE_ARRAY 0x00000040 |
200 | /* Chip requires that BBT is periodically rewritten to prevent | 200 | /* Chip requires that BBT is periodically rewritten to prevent |
201 | * bits from adjacent blocks from 'leaking' in altering data. | 201 | * bits from adjacent blocks from 'leaking' in altering data. |
202 | * This happens with the Renesas AG-AND chips, possibly others. */ | 202 | * This happens with the Renesas AG-AND chips, possibly others. */ |
@@ -219,8 +219,8 @@ extern int nand_read_raw (struct mtd_info *mtd, uint8_t *buf, loff_t from, size_ | |||
219 | /* Use a flash based bad block table. This option is passed to the | 219 | /* Use a flash based bad block table. This option is passed to the |
220 | * default bad block table function. */ | 220 | * default bad block table function. */ |
221 | #define NAND_USE_FLASH_BBT 0x00010000 | 221 | #define NAND_USE_FLASH_BBT 0x00010000 |
222 | /* The hw ecc generator provides a syndrome instead a ecc value on read | 222 | /* The hw ecc generator provides a syndrome instead a ecc value on read |
223 | * This can only work if we have the ecc bytes directly behind the | 223 | * This can only work if we have the ecc bytes directly behind the |
224 | * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */ | 224 | * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */ |
225 | #define NAND_HWECC_SYNDROME 0x00020000 | 225 | #define NAND_HWECC_SYNDROME 0x00020000 |
226 | /* This option skips the bbt scan during initialization. */ | 226 | /* This option skips the bbt scan during initialization. */ |
@@ -252,7 +252,7 @@ struct nand_chip; | |||
252 | 252 | ||
253 | /** | 253 | /** |
254 | * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices | 254 | * struct nand_hw_control - Control structure for hardware controller (e.g ECC generator) shared among independend devices |
255 | * @lock: protection lock | 255 | * @lock: protection lock |
256 | * @active: the mtd device which holds the controller currently | 256 | * @active: the mtd device which holds the controller currently |
257 | * @wq: wait queue to sleep on if a NAND operation is in progress | 257 | * @wq: wait queue to sleep on if a NAND operation is in progress |
258 | * used instead of the per chip wait queue when a hw controller is available | 258 | * used instead of the per chip wait queue when a hw controller is available |
@@ -265,8 +265,8 @@ struct nand_hw_control { | |||
265 | 265 | ||
266 | /** | 266 | /** |
267 | * struct nand_chip - NAND Private Flash Chip Data | 267 | * struct nand_chip - NAND Private Flash Chip Data |
268 | * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device | 268 | * @IO_ADDR_R: [BOARDSPECIFIC] address to read the 8 I/O lines of the flash device |
269 | * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device | 269 | * @IO_ADDR_W: [BOARDSPECIFIC] address to write the 8 I/O lines of the flash device |
270 | * @read_byte: [REPLACEABLE] read one byte from the chip | 270 | * @read_byte: [REPLACEABLE] read one byte from the chip |
271 | * @write_byte: [REPLACEABLE] write one byte to the chip | 271 | * @write_byte: [REPLACEABLE] write one byte to the chip |
272 | * @read_word: [REPLACEABLE] read one word from the chip | 272 | * @read_word: [REPLACEABLE] read one word from the chip |
@@ -289,7 +289,7 @@ struct nand_hw_control { | |||
289 | * be provided if a hardware ECC is available | 289 | * be provided if a hardware ECC is available |
290 | * @erase_cmd: [INTERN] erase command write function, selectable due to AND support | 290 | * @erase_cmd: [INTERN] erase command write function, selectable due to AND support |
291 | * @scan_bbt: [REPLACEABLE] function to scan bad block table | 291 | * @scan_bbt: [REPLACEABLE] function to scan bad block table |
292 | * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines | 292 | * @eccmode: [BOARDSPECIFIC] mode of ecc, see defines |
293 | * @eccsize: [INTERN] databytes used per ecc-calculation | 293 | * @eccsize: [INTERN] databytes used per ecc-calculation |
294 | * @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step | 294 | * @eccbytes: [INTERN] number of ecc bytes per ecc-calculation step |
295 | * @eccsteps: [INTERN] number of ecc calculation steps per page | 295 | * @eccsteps: [INTERN] number of ecc calculation steps per page |
@@ -301,7 +301,7 @@ struct nand_hw_control { | |||
301 | * @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock | 301 | * @phys_erase_shift: [INTERN] number of address bits in a physical eraseblock |
302 | * @bbt_erase_shift: [INTERN] number of address bits in a bbt entry | 302 | * @bbt_erase_shift: [INTERN] number of address bits in a bbt entry |
303 | * @chip_shift: [INTERN] number of address bits in one chip | 303 | * @chip_shift: [INTERN] number of address bits in one chip |
304 | * @data_buf: [INTERN] internal buffer for one page + oob | 304 | * @data_buf: [INTERN] internal buffer for one page + oob |
305 | * @oob_buf: [INTERN] oob buffer for one eraseblock | 305 | * @oob_buf: [INTERN] oob buffer for one eraseblock |
306 | * @oobdirty: [INTERN] indicates that oob_buf must be reinitialized | 306 | * @oobdirty: [INTERN] indicates that oob_buf must be reinitialized |
307 | * @data_poi: [INTERN] pointer to a data buffer | 307 | * @data_poi: [INTERN] pointer to a data buffer |
@@ -316,22 +316,22 @@ struct nand_hw_control { | |||
316 | * @bbt: [INTERN] bad block table pointer | 316 | * @bbt: [INTERN] bad block table pointer |
317 | * @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup | 317 | * @bbt_td: [REPLACEABLE] bad block table descriptor for flash lookup |
318 | * @bbt_md: [REPLACEABLE] bad block table mirror descriptor | 318 | * @bbt_md: [REPLACEABLE] bad block table mirror descriptor |
319 | * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan | 319 | * @badblock_pattern: [REPLACEABLE] bad block scan pattern used for initial bad block scan |
320 | * @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices | 320 | * @controller: [OPTIONAL] a pointer to a hardware controller structure which is shared among multiple independend devices |
321 | * @priv: [OPTIONAL] pointer to private chip date | 321 | * @priv: [OPTIONAL] pointer to private chip date |
322 | * @errstat: [OPTIONAL] hardware specific function to perform additional error status checks | 322 | * @errstat: [OPTIONAL] hardware specific function to perform additional error status checks |
323 | * (determine if errors are correctable) | 323 | * (determine if errors are correctable) |
324 | */ | 324 | */ |
325 | 325 | ||
326 | struct nand_chip { | 326 | struct nand_chip { |
327 | void __iomem *IO_ADDR_R; | 327 | void __iomem *IO_ADDR_R; |
328 | void __iomem *IO_ADDR_W; | 328 | void __iomem *IO_ADDR_W; |
329 | 329 | ||
330 | u_char (*read_byte)(struct mtd_info *mtd); | 330 | u_char (*read_byte)(struct mtd_info *mtd); |
331 | void (*write_byte)(struct mtd_info *mtd, u_char byte); | 331 | void (*write_byte)(struct mtd_info *mtd, u_char byte); |
332 | u16 (*read_word)(struct mtd_info *mtd); | 332 | u16 (*read_word)(struct mtd_info *mtd); |
333 | void (*write_word)(struct mtd_info *mtd, u16 word); | 333 | void (*write_word)(struct mtd_info *mtd, u16 word); |
334 | 334 | ||
335 | void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len); | 335 | void (*write_buf)(struct mtd_info *mtd, const u_char *buf, int len); |
336 | void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len); | 336 | void (*read_buf)(struct mtd_info *mtd, u_char *buf, int len); |
337 | int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len); | 337 | int (*verify_buf)(struct mtd_info *mtd, const u_char *buf, int len); |
@@ -396,7 +396,7 @@ struct nand_chip { | |||
396 | * @name: Identify the device type | 396 | * @name: Identify the device type |
397 | * @id: device ID code | 397 | * @id: device ID code |
398 | * @pagesize: Pagesize in bytes. Either 256 or 512 or 0 | 398 | * @pagesize: Pagesize in bytes. Either 256 or 512 or 0 |
399 | * If the pagesize is 0, then the real pagesize | 399 | * If the pagesize is 0, then the real pagesize |
400 | * and the eraseize are determined from the | 400 | * and the eraseize are determined from the |
401 | * extended id bytes in the chip | 401 | * extended id bytes in the chip |
402 | * @erasesize: Size of an erase block in the flash device. | 402 | * @erasesize: Size of an erase block in the flash device. |
@@ -425,7 +425,7 @@ struct nand_manufacturers { | |||
425 | extern struct nand_flash_dev nand_flash_ids[]; | 425 | extern struct nand_flash_dev nand_flash_ids[]; |
426 | extern struct nand_manufacturers nand_manuf_ids[]; | 426 | extern struct nand_manufacturers nand_manuf_ids[]; |
427 | 427 | ||
428 | /** | 428 | /** |
429 | * struct nand_bbt_descr - bad block table descriptor | 429 | * struct nand_bbt_descr - bad block table descriptor |
430 | * @options: options for this descriptor | 430 | * @options: options for this descriptor |
431 | * @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE | 431 | * @pages: the page(s) where we find the bbt, used with option BBT_ABSPAGE |
@@ -436,14 +436,14 @@ extern struct nand_manufacturers nand_manuf_ids[]; | |||
436 | * @version: version read from the bbt page during scan | 436 | * @version: version read from the bbt page during scan |
437 | * @len: length of the pattern, if 0 no pattern check is performed | 437 | * @len: length of the pattern, if 0 no pattern check is performed |
438 | * @maxblocks: maximum number of blocks to search for a bbt. This number of | 438 | * @maxblocks: maximum number of blocks to search for a bbt. This number of |
439 | * blocks is reserved at the end of the device where the tables are | 439 | * blocks is reserved at the end of the device where the tables are |
440 | * written. | 440 | * written. |
441 | * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than | 441 | * @reserved_block_code: if non-0, this pattern denotes a reserved (rather than |
442 | * bad) block in the stored bbt | 442 | * bad) block in the stored bbt |
443 | * @pattern: pattern to identify bad block table or factory marked good / | 443 | * @pattern: pattern to identify bad block table or factory marked good / |
444 | * bad blocks, can be NULL, if len = 0 | 444 | * bad blocks, can be NULL, if len = 0 |
445 | * | 445 | * |
446 | * Descriptor for the bad block table marker and the descriptor for the | 446 | * Descriptor for the bad block table marker and the descriptor for the |
447 | * pattern which identifies good and bad blocks. The assumption is made | 447 | * pattern which identifies good and bad blocks. The assumption is made |
448 | * that the pattern and the version count are always located in the oob area | 448 | * that the pattern and the version count are always located in the oob area |
449 | * of the first block. | 449 | * of the first block. |