2 files changed, 15 insertions, 18 deletions

diff --git a/Documentation/DocBook/mtdnand.tmpl b/Documentation/DocBook/mtdnand.tmpl
index 17910e2052ad..0c674be0d3c6 100644
--- a/Documentation/DocBook/mtdnand.tmpl
+++ b/Documentation/DocBook/mtdnand.tmpl
@@ -572,7 +572,7 @@ static void board_select_chip (struct mtd_info *mtd, int chip)
                         </para>
                         <para>
                                 The simplest way to activate the FLASH based bad block table support 
-                                is to set the option NAND_USE_FLASH_BBT in the option field of
+                                is to set the option NAND_BBT_USE_FLASH in the bbt_option field of
                                 the nand chip structure before calling nand_scan(). For AG-AND
                                 chips is this done by default.
                                 This activates the default FLASH based bad block table functionality 
@@ -773,20 +773,6 @@ struct nand_oobinfo {
                                 done according to the default builtin scheme.
                         </para>
                 </sect2>
-                <sect2 id="User_space_placement_selection">
-                        <title>User space placement selection</title>
-                <para>
-                        All non ecc functions like mtd->read and mtd->write use an internal 
-                        structure, which can be set by an ioctl. This structure is preset 
-                        to the autoplacement default.
-                        <programlisting>
-        ioctl (fd, MEMSETOOBSEL, oobsel);
-                        </programlisting>
-                        oobsel is a pointer to a user supplied structure of type
-                        nand_oobconfig. The contents of this structure must match the 
-                        criteria of the filesystem, which will be used. See an example in utils/nandwrite.c.
-                </para>
-                </sect2>
         </sect1>        
         <sect1 id="Spare_area_autoplacement_default">
                 <title>Spare area autoplacement default schemes</title>
@@ -1158,9 +1144,6 @@ in this page</entry>
                 These constants are defined in nand.h. They are ored together to describe
                 the functionality.
                 <programlisting>
-/* Use a flash based bad block table. This option is parsed by the
- * default bad block table function (nand_default_bbt). */
-#define NAND_USE_FLASH_BBT      0x00010000
 /* The hw ecc generator provides a syndrome instead a ecc value on read 
  * This can only work if we have the ecc bytes directly behind the 
  * data bytes. Applies for DOC and AG-AND Renesas HW Reed Solomon generators */
diff --git a/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt b/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt
new file mode 100644
index 000000000000..ef66ddd01da0
--- /dev/null
+++ b/Documentation/devicetree/bindings/mtd/atmel-dataflash.txt
@@ -0,0 +1,14 @@
+* Atmel Data Flash
+
+Required properties:
+- compatible : "atmel,<model>", "atmel,<series>", "atmel,dataflash".
+
+Example:
+
+flash@1 {
+        #address-cells = <1>;
+        #size-cells = <1>;
+        compatible = "atmel,at45db321d", "atmel,at45", "atmel,dataflash";
+        spi-max-frequency = <25000000>;
+        reg = <1>;
+};